Endevco licenses NASA technology for pressure sensors
Endevco has announced the licensing of three patents covering high-temperature, harsh-environment silicon carbide (SiC) pressure sensors from NASA's Glenn Research Center. An Endevco silicon-based accelerometer was used to validate the initial NASA design in 2000.
The NASA technologies licensed by Endevco include a packaging technique and chip fabrication methods developed by a team led by Dr. Robert Okojie at Glenn for use in aircraft engine combustion chambers. SiC pressure sensors manufactured using these new processes can be used to improve testing of jet engines, in deep well drilling (where pressure and temperature rise as drilling depth increases), and in automobile combustion cylinders.
Silicon carbide used for the new NASA technologies, rather than the traditional silicon, eliminates the need for cooling. The current generation of SiC-based pressure sensors has been demonstrated to operate for 130 hours at 600degC in air, making them durable and reliable for use for the first time in engine ground testing and short duration flight test instrumentation.
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